1、華中科技大學碩士學位論文新型PST鐵電薄膜的制備及其性能研究姓名：李元昕申請學位級別：碩士專業(yè)：微電子學與固體電子學指導教師：劉梅冬20040401ABSTRACTPbSc0.5Ta0.5O3(PST)hashigherpyroelectricefficienthigherdielectricconstantlowerdielectriclosshigherdetectingmeritsthanothercommonpyroelectr

2、icmaterialsPSThastheadvantagesofambienttemperatureoperationlowpowerconsumptionlowinservicecostslowweightcompactness.PSThasbeenwidelyusedinuncooledinfraredfocalplanearrays(UFPA)hasinvolvedmeinteresting.Thispaperaimedatsys

3、tematicallystudyingtheSolGeltechniquespropertiesoftheprogressofPSTthinfilms.ThisisthefoundationofresearchdevelopmentfdeviceofPSTthinfilms.ThePSTferroelectricthinfilmsaresynthesizedonPtTiSiO2SisubstratesbyimprovelSolGelte

4、chnique.Thestartingmaterialsweretantalumethoxide(Ta(OC2H5)5)sciumacetate(Sc(CH3COO)3xH2O)leadacetate(Pb(CH3COO)23H2O)monoethanolaminedissolvedin2methoxethanol(CH3OCH2CH2OH).ThereactionmechanismofPSTgelshasbeenstudied.The

5、influencesofannealingtimeannealingtemperatureonthecrystallinityfmationpropertiesofthefilmshavealsobeeninvestigated.PSTthinfilmswithcrackfreecompacthavebeensuccessfulfabricated.PSTthinfilmsthathavebeenpreparedwereanalyzed

6、byXraydiffraction(XRD)scanningelectronmicrograph(SEM).TheexperimentalresultsshowthatPSTthinfilmsthathavebeenpreparedwerecrackfreecompactwithfewimpurityphases.TheresultsshowthattheoptimumprocessingfPSTfilmsisRTA75015minRT

7、A8005minPTseedlayers.DielectricferroelectricpyroelectricpropertiesofPSTthinfilmshavebeentested.ThepyroelectriccoefficientofPSTthinfilmsare7.4104Cm2K1detectingmeritsis2.7105Pa12.Keywds:PSTferroelectricthinfilmUFPASolGelte