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1、北京交通大學(xué)碩士學(xué)位論文垂直構(gòu)型有機(jī)光敏場(chǎng)效應(yīng)晶體管的研究姓名：陳小川申請(qǐng)學(xué)位級(jí)別：碩士專(zhuān)業(yè)：材料物理與化學(xué)指導(dǎo)教師：楊盛誼20090601j也塞交通太堂亟堂包論塞△墾量I＆△堡!ABSTRACTABSTRACT：Withthehigh—speeddevelopmentofinformationizationlargescaleintegratedcircuitstechnologyandterminaldisplaytechnolog

2、ybecomethemostimportantsupporttechniquesininformationbasedsocietyTraditionalsemiconductortechniqueshavedisadvantagessuchascomplicatedpreparationengineeringnotsuitforflexiblesubstrateandlargeareaproductionandhighinvesting

3、costOrganicsemiconductorshavebeenextensivelyusedinPhotoelectronicsbecauseofitsadvantagesoflightness，lowcostandcompatibletoflexiblesubstrateBasedonphotoinducedeffect，photoresponsiveorganicfieldeffecttransistors(PhotOFETs)

4、canamplifyphoto—generatedcurrentbyitstransconductanceWiththeirwideapplicationsPhotOFETshaverecentlybeendemonstratedasakindofpromisingdevicesinfabricatingfullorganicdisplaysandorganicphotodetectors，andithasbecomeanimporta

5、ntleadingtopicinorganictransistorInthispaperbyfocusingonimprovingthestructureofPhotOFETs，wefabricatedtheverticalphotoresponsiveorganicfield—effecttransistors(VerticalPhotOFETs)inwhichthechannellengthcanbereducedtonanomet

6、ers，anditdoesn’tneedtouseLithographyneperformanceofourdeviceswascharacterizedandfactorsaffectingtheircharacteristicswereanalyzedindetailFirstlyMEH—PPVbasedVerticalPhotOFETswerefabricatedandcharacterizedandtheimpactofdiff

7、erentinsulatinglayersondeviceperformanceWasinvestigatedThe“ON／OFFcurrentratio(／odl夠、)Qt8andthecurrentratiounderlighttothatindarkQ州ID&曲Qt50andlightsensitivityis46mA／WwasobtainedwithSi02asinsulatinglayerwhenthe如s=一5Vand1GS

8、=4VThethicknessofMEHPPVlayerof90n／／1asthephotosensitivelayerinverticalPhotOFETsshowsarelativelygoodperformanceSecondlyPentacenebasedverticalPhotOFETswerefabricated，andtheimpactofdifferentdielectriclayersondeviceperforman

9、ceWasinvestigatedThe厶∥方of70，mel刊ID斌Qt12andthelightsensitivityof12rnA／WwereobtainedwithSi02asinsulatinglayerwhentheIDs=lOVandIGs4NTheI—l嗡of6，the／p0ID斌ratioof40andthelightsensitivityof8mA／WwereobtainedwithLiFasinsulatingla

10、yerwhenthe／os。10Vand尼s=4VThethicknessofPentacenelayerof80nlTlasthephotosensitivelayerinverticalPhotOFETsshowsarelativelygoodperformanceFinallyweusetheopenenvironmentofhightemperatureoxidationtotheoxidationofsiliconfor180

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